IRFR320PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR320PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO-252

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IRFR320PBF Datasheet (PDF)

..1. Size:1849K international rectifier
irfr320pbf irfu320pbf.pdf

PD-95013AIRFR320PbFIRFU320PbF Lead-Free12/13/04Document Number: 91273 www.vishay.com1IRFR/U320PbFDocument Number: 91273 www.vishay.com2IRFR/U320PbFDocument Number: 91273 www.vishay.com3IRFR/U320PbFDocument Number: 91273 www.vishay.com4IRFR/U320PbFDocument Number: 91273 www.vishay.com5IRFR/U320PbFDocument Number: 91273 www.vishay.com6IRFR/U320

..2. Size:1814K international rectifier
irfr320pbf irfu320pbf.pdf

PD-95013AIRFR320PbFIRFU320PbF Lead-Freewww.irf.com 112/13/04IRFR/U320PbF2 www.irf.comIRFR/U320PbFwww.irf.com 3IRFR/U320PbF4 www.irf.comIRFR/U320PbFwww.irf.com 5IRFR/U320PbF6 www.irf.comIRFR/U320PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent

7.1. Size:211K 1
irfu320a irfr320a.pdf

7.2. Size:177K international rectifier
irfr320.pdf

7.3. Size:503K samsung
irfr320a.pdf

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V (Typ.) Lower RDS(ON) : 1.408 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

7.4. Size:1555K vishay
irfr320 irfu320 sihfr320 sihfu320.pdf

IRFR320, IRFU320, SiHFR320, SiHFU320Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.8RoHS* Surface Mount (IRFR320/SiHFR320)Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFU320/SiHFU320)Qgs (nC) 3.3 Available in Tape and ReelQgd (nC) 11 Fast Switching

7.5. Size:860K infineon
irfr320 irfu320 sihfr320 sihfu320.pdf

IRFR320, IRFU320, SiHFR320, SiHFU320www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400 Repetitive Avalanche Rated Surface Mount (IRFR320,SiHFR320)RDS(on) ()VGS = 10 V 1.8 Straight Lead (IRFU320,SiHFU320)Qg (Max.) (nC) 20 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 11 Ease of

7.6. Size:288K inchange semiconductor
irfr320.pdf

iscN-Channel MOSFET Transistor IRFR320FEATURESLow drain-source on-resistance:RDS(ON) 1.8 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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