AM7363P Todos los transistores

 

AM7363P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM7363P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 128 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm

Encapsulados: DFN3X3

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AM7363P datasheet

 ..1. Size:290K  analog power
am7363p.pdf pdf_icon

AM7363P

Analog Power AM7363P P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 47 @ VGS = -10V -7.1 Low thermal impedance -60 60 @ VGS = -4.5V -6.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.1. Size:374K  analog power
am7366n.pdf pdf_icon

AM7363P

Analog Power AM7366N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 50 @ VGS = 10V 6.9 Low thermal impedance 60 60 @ VGS = 4.5V 6.3 Fast switching speed Typical Applications DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE N

 9.2. Size:469K  analog power
am7360n.pdf pdf_icon

AM7363P

Analog Power AM7360N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 22 @ VGS = 10V 11 Low thermal impedance 60 26 @ VGS = 4.5V 10 Fast switching speed DFN3x3-8L Typical Applications DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTE

 9.3. Size:67K  analog power
am7362na.pdf pdf_icon

AM7363P

Analog Power AM7362NA N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V 18 converters and power management in portable and 60 9 @ VGS = 4.5V 17 battery-po

Otros transistores... IRFR310PBF , IRFR320PBF , AM7340N , AM7341P , AM7343P , AM7360N , AM7361P , AM7362NA , P55NF06 , AM7364N , AM7365P , AM7366N , AM7367P , AM7380N , AM7381P , AM7382N , AM7390NS .

History: IXFQ28N60P3

 

 

 


History: IXFQ28N60P3

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