AM7364N Todos los transistores

 

AM7364N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7364N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: DFN3X3
 

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AM7364N Datasheet (PDF)

 ..1. Size:380K  analog power
am7364n.pdf pdf_icon

AM7364N

Analog Power AM7364NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)13 @ VGS = 10V14 Low thermal impedance 6016 @ VGS = 4.5V12 Fast switching speed Typical Applications: DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED

 9.1. Size:374K  analog power
am7366n.pdf pdf_icon

AM7364N

Analog Power AM7366NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)50 @ VGS = 10V6.9 Low thermal impedance 6060 @ VGS = 4.5V6.3 Fast switching speed Typical Applications: DFN3x3-8L DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE N

 9.2. Size:469K  analog power
am7360n.pdf pdf_icon

AM7364N

Analog Power AM7360NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V11 Low thermal impedance 6026 @ VGS = 4.5V10 Fast switching speed DFN3x3-8L Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTE

 9.3. Size:67K  analog power
am7362na.pdf pdf_icon

AM7364N

Analog Power AM7362NAN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V 18converters and power management in portable and 609 @ VGS = 4.5V 17battery-po

Otros transistores... IRFR320PBF , AM7340N , AM7341P , AM7343P , AM7360N , AM7361P , AM7362NA , AM7363P , 2SK3878 , AM7365P , AM7366N , AM7367P , AM7380N , AM7381P , AM7382N , AM7390NS , AM7400N .

History: WML12N80M3

 

 
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