AM7436N Todos los transistores

 

AM7436N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7436N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: DFN5X6
 

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AM7436N Datasheet (PDF)

 ..1. Size:315K  analog power
am7436n.pdf pdf_icon

AM7436N

Analog Power AM7436NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)4.6 @ VGS = 10V27 Low thermal impedance 305.5 @ VGS = 4.5V25 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS

 9.1. Size:326K  analog power
am7434n.pdf pdf_icon

AM7436N

Analog Power AM7434NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.9 @ VGS = 10V27 Low thermal impedance 305.9 @ VGS = 4.5V24 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 9.2. Size:323K  analog power
am7430n.pdf pdf_icon

AM7436N

Analog Power AM7430NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)13 @ VGS = 10V16 Low thermal impedance 3020 @ VGS = 4.5V13 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.3. Size:186K  analog power
am7431p.pdf pdf_icon

AM7436N

Analog Power AM7431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17converters and power management in portable and -3019 @ VGS = -4.5V -14batte

Otros transistores... AM7423P , AM7424NA , AM7430N , AM7431P , AM7432N , AM7433P , AM7434N , AM7435P , IRFZ24N , AM7438N , AM7440N , AM7441P , AM7442N , AM7444N , AM7446NA , AM7450N , AM7452NA .

History: WMK28N65F2 | MMIX1F360N15T2 | NCE50NF600I | BUK9Y4R4-40E | CEU655 | 2N6917 | SM1A11NSV

 

 
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