AM7438N Todos los transistores

 

AM7438N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7438N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 58 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: SOIC-8
 

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AM7438N Datasheet (PDF)

 ..1. Size:326K  analog power
am7438n.pdf pdf_icon

AM7438N

Analog Power AM7438NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)7.5 @ VGS = 10V22 Low thermal impedance 3011.5 @ VGS = 4.5V18 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.1. Size:326K  analog power
am7434n.pdf pdf_icon

AM7438N

Analog Power AM7434NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.9 @ VGS = 10V27 Low thermal impedance 305.9 @ VGS = 4.5V24 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 9.2. Size:323K  analog power
am7430n.pdf pdf_icon

AM7438N

Analog Power AM7430NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)13 @ VGS = 10V16 Low thermal impedance 3020 @ VGS = 4.5V13 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.3. Size:186K  analog power
am7431p.pdf pdf_icon

AM7438N

Analog Power AM7431PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 13 @ VGS = -10V -17converters and power management in portable and -3019 @ VGS = -4.5V -14batte

Otros transistores... AM7424NA , AM7430N , AM7431P , AM7432N , AM7433P , AM7434N , AM7435P , AM7436N , P60NF06 , AM7440N , AM7441P , AM7442N , AM7444N , AM7446NA , AM7450N , AM7452NA , AM7460N .

History: SI7682DP | GP2M002A060XG

 

 
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