AM7441P Todos los transistores

 

AM7441P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7441P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOIC-8PP
 

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AM7441P Datasheet (PDF)

 ..1. Size:175K  analog power
am7441p.pdf pdf_icon

AM7441P

Analog Power AM7441PP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 26 @ VGS = -10V -12converters and power management in portable and -40battery-powered products

 9.1. Size:327K  analog power
am7446na.pdf pdf_icon

AM7441P

Analog Power AM7446NAN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)5.5 @ VGS = 10V25 Low thermal impedance 407 @ VGS = 4.5V22 Fast switching speed Typical Applications: DFN5X6-8L DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS O

 9.2. Size:331K  analog power
am7444n.pdf pdf_icon

AM7441P

Analog Power AM7444NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)3 @ VGS = 10V34 Low thermal impedance 405 @ VGS = 4.5V26 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE M

 9.3. Size:71K  analog power
am7442n.pdf pdf_icon

AM7441P

Analog Power AM7442NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 9 @ VGS = 10V 20converters and power management in portable and 4012 @ VGS = 4.5V 17battery-

Otros transistores... AM7431P , AM7432N , AM7433P , AM7434N , AM7435P , AM7436N , AM7438N , AM7440N , 10N65 , AM7442N , AM7444N , AM7446NA , AM7450N , AM7452NA , AM7460N , AM7461P , AM7462N .

History: BSL207SP | LSB55R050GT | S85N042RP | HM10P10D | FDU6688 | UPA1950

 

 
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