AM7468N Todos los transistores

 

AM7468N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7468N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 182 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: DFN5X6
 

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AM7468N Datasheet (PDF)

 ..1. Size:323K  analog power
am7468n.pdf pdf_icon

AM7468N

Analog Power AM7468NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)17 @ VGS = 10V15 Low thermal impedance 6021 @ VGS = 4.5V13 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT

 9.1. Size:312K  analog power
am7463p.pdf pdf_icon

AM7468N

Analog Power AM7463PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = -10V -17 Low thermal impedance -6016 @ VGS = -4.5V -15 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.2. Size:371K  analog power
am7462n.pdf pdf_icon

AM7468N

Analog Power AM7462NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)22 @ VGS = 10V13 Low thermal impedance 6026 @ VGS = 4.5V12 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.3. Size:179K  analog power
am7464n.pdf pdf_icon

AM7468N

Analog Power AM7464NN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 82 @ VGS = 10V 6.460battery-powered products such a

Otros transistores... AM7450N , AM7452NA , AM7460N , AM7461P , AM7462N , AM7463P , AM7464N , AM7466N , IRFB31N20D , AM7470NA , AM7480N , AM7481P , AM7482N , AM7483P , AM7490N , AM7492N , AM7496N .

History: SM1F14NSKP | HX70N06-TA3 | STL6P3LLH6 | AON4605

 

 
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