AM7498N Todos los transistores

 

AM7498N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM7498N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: DFN5X6

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AM7498N Datasheet (PDF)

 ..1. Size:330K  analog power
am7498n.pdf

AM7498N
AM7498N

Analog Power AM7498NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)360 @ VGS = 10V3.1 Low thermal impedance 150370 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A

 9.1. Size:324K  analog power
am7490n.pdf

AM7498N
AM7498N

Analog Power AM7490NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)48 @ VGS = 10V8.3 Low thermal impedance 15054 @ VGS = 5.5V7.9 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLU

 9.2. Size:324K  analog power
am7492n.pdf

AM7498N
AM7498N

Analog Power AM7492NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)88 @ VGS = 10V6.2 Low thermal impedance 15096 @ VGS = 5.5V5.9 Fast switching speed Typical Applications: DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

 9.3. Size:102K  analog power
am7496n.pdf

AM7498N
AM7498N

Analog Power AM7496NN-Channel 150-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 220 @ VGS = 10V 3.9150battery-powered products su

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