AM7961P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM7961P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 182 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Encapsulados: DFN5X6
Búsqueda de reemplazo de AM7961P MOSFET
- Selecciónⓘ de transistores por parámetros
AM7961P datasheet
am7961p.pdf
Analog Power AM7961P Dual P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 44 @ VGS = -10V -6.2 Low thermal impedance -60 52 @ VGS = -4.5V -5.7 Fast switching speed Typical Applications DFN5X6-8L White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
am7960n.pdf
Analog Power AM7960N Dual N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 8.4 @ V = 10V 36 GS dissipation. Typical applications are DC-DC 60 converters and power management in portable and 9.4 @ V = 4.5V 34 GS
am7962n.pdf
Analog Power AM7962N Dual N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 23 @ V = 10V 22 GS dissipation. Typical applications are DC-DC 60 converters and power management in portable and 28 @ V = 4.5V 20 GS
Otros transistores... AM7910N, AM7920N, AM7924N, AM7930N, AM7931P, AM7933P, AM7940N, AM7960N, 60N06, AM7962N, AM80N03-05D, AM80N03-06D, AM80N06-05D, AM80N20-40PCFM, AM8204, AM8205, AM8206
History: APT1003RSFLLG
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