IXFH21N50 Todos los transistores

 

IXFH21N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH21N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 135 nC

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de MOSFET IXFH21N50

 

IXFH21N50 Datasheet (PDF)

1.1. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

IXFH21N50
IXFH21N50

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS =

5.1. ixfa20n85xhv ixfh20n85x.pdf Size:288K _update-mosfet

IXFH21N50
IXFH21N50

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X   RDS(on)    330m     IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuo

5.2. ixfv26n50p ixfh26n50p.pdf Size:323K _ixys

IXFH21N50
IXFH21N50

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET ? ? IXFV 26N50PS RDS(on) ? 230 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-247 (IXFH) VGSS Continuos 30 V VGSM Transient

 5.3. ixfh26n60q ixft26n60q.pdf Size:107K _ixys

IXFH21N50
IXFH21N50

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs ? RDS(on) = 0.25 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 T

5.4. ixfh20n80q ixfk20n80q ixft20n80q.pdf Size:149K _ixys

IXFH21N50
IXFH21N50

IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs ? ? IXFT20N80Q RDS(on) = 0.42 ? ? ? Q-Class N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V (TAB) VGS Continuous 20

 5.5. ixfq28n60p3 ixfh28n60p3.pdf Size:130K _ixys

IXFH21N50
IXFH21N50

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 260mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-247 ( IX

5.6. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

IXFH21N50
IXFH21N50

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

5.7. ixfh22n55.pdf Size:69K _ixys

IXFH21N50
IXFH21N50

HiPerFETTM IXFH 22 N55 VDSS = 550 V Power MOSFET ID (cont) = 22 A RDS(on) = 0.27 W N-Channel Enhancement Mode trr ? 250 ns Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 550 V VDGR TJ = 25C to 150C; RGS = 1 MW 550 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C22 A IDM TC = 25C, pulse

5.8. ixfh26n60p ixft26n60p ixfv26n60p.pdf Size:197K _ixys

IXFH21N50
IXFH21N50

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET ? ? ? ? IXFV26N60P RDS(on) ? 270 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV26N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40

5.9. ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf Size:155K _ixys

IXFH21N50
IXFH21N50

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 230mΩ ≤ Ω ≤ Ω IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.10. ixft24n90p ixfh24n90p.pdf Size:122K _ixys

IXFH21N50
IXFH21N50

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM ? ? RDS(on) ? 420m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V TAB VGSS Continuous 30

5.11. ixfh24n80p ixfk24n80p ixft24n80p.pdf Size:158K _ixys

IXFH21N50
IXFH21N50

IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET ? ? IXFT 24N80P RDS(on) ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGSS Continuous 30 V G VGSM Transient

5.12. ixfh20n80p ixft20n80p ixfv20n80p.pdf Size:326K _ixys

IXFH21N50
IXFH21N50

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P ? ? RDS(on) ? 520 m ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 20N80PS ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V (TAB) VGSS Continuou

5.13. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH21N50
IXFH21N50

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

5.14. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

IXFH21N50
IXFH21N50

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V (TAB)

5.15. ixfh20n60q ixft20n60q.pdf Size:144K _ixys

IXFH21N50
IXFH21N50

IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs Ω RDS(on) = 0.35 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS C

5.16. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

IXFH21N50
IXFH21N50

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

5.17. ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Size:157K _ixys

IXFH21N50
IXFH21N50

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 300mΩ ≤ Ω ≤ Ω IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.18. ixfh230n10t.pdf Size:165K _ixys

IXFH21N50
IXFH21N50

Preliminary Technical Information VDSS = 100V Trench HiperFETTM IXFH230N10T ID25 = 230A Power MOSFET ? ? RDS(on) ? ? ? 4.7m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V G VDGR TJ = 25C to 175C, RGS = 1M? 100 V (TAB) D S VGSS Continuous 20 V VGSM Transient 30 V

5.19. ixfh22n50p ixfv22n50p.pdf Size:312K _ixys

IXFH21N50
IXFH21N50

IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) ? 270 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V D (TAB) VGS Continuous 30 V VGSM

5.20. ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf Size:155K _ixys

IXFH21N50
IXFH21N50

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X   RDS(on)    175m     IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

5.21. ixfh20n85x.pdf Size:212K _inchange_semiconductor

IXFH21N50
IXFH21N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH20N85X ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IXFH21N50
  IXFH21N50
  IXFH21N50
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: GSM4422 | GSM4412W | GSM4412 | GSM4403 | GSM4401S | GSM4248W | GSM4228 | GSM4214W | GSM4214 | GSM4210W | GSM4210 | GSM4172WS | GSM4172S | GSM4134W | GSM4134 |

 

 

 
Back to Top