AM80N20-40PCFM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM80N20-40PCFM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 444 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-220CFM

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AM80N20-40PCFM Datasheet (PDF)

..1. Size:316K analog power
am80n20-40pcfm.pdf

Analog Power AM80N20-40PCFMN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)45 @ VGS = 10V Low thermal impedance 20080a60 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

9.1. Size:301K analog power
am80n06-05d.pdf

Analog Power AM80N06-05DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)5.9 @ VGS = 10V76 Low thermal impedance 606.6 @ VGS = 5.5V72 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

9.2. Size:85K analog power
am80n03-06d.pdf

Analog Power AM80N03-06DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 5.8 @ VGS = 10V 76dissipation. Typical applications are DC-DC 30converters and power management in portable and 9 @ VGS = 4.5V 61batte

9.3. Size:85K analog power
am80n03-05d.pdf

Analog Power AM80N03-05DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 4.8 @ VGS = 10V 84dissipation. Typical applications are DC-DC 30converters and power management in portable and 7 @ VGS = 4.5V 70batte

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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