AM80N20-40PCFM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM80N20-40PCFM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 444 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO-220CFM

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AM80N20-40PCFM datasheet

 ..1. Size:316K  analog power
 am80n20-40pcfm.pdf pdf_icon

AM80N20-40PCFM

Analog Power AM80N20-40PCFM N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 45 @ VGS = 10V Low thermal impedance 200 80a 60 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.1. Size:301K  analog power
 am80n06-05d.pdf pdf_icon

AM80N20-40PCFM

Analog Power AM80N06-05D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 5.9 @ VGS = 10V 76 Low thermal impedance 60 6.6 @ VGS = 5.5V 72 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

 9.2. Size:85K  analog power
 am80n03-06d.pdf pdf_icon

AM80N20-40PCFM

Analog Power AM80N03-06D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 5.8 @ VGS = 10V 76 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 9 @ VGS = 4.5V 61 batte

 9.3. Size:85K  analog power
 am80n03-05d.pdf pdf_icon

AM80N20-40PCFM

Analog Power AM80N03-05D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 4.8 @ VGS = 10V 84 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 7 @ VGS = 4.5V 70 batte

MOSTRAR MÁS

Otros transistores... AM7933P, AM7940N, AM7960N, AM7961P, AM7962N, AM80N03-05D, AM80N03-06D, AM80N06-05D, IRF3205, AM8204, AM8205, AM8206, AM8208, AM8810, AM8811, AM8812, AM8814