AM8206 Todos los transistores

 

AM8206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM8206
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SOT-26
 

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AM8206 Datasheet (PDF)

 ..1. Size:788K  ait semi
am8206.pdf pdf_icon

AM8206

AiT Semiconductor Inc. AM8206 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8206 uses advanced trench technology to V = 20V, I = 7A DS Dprovide excellent R , low gate charge and R

 9.1. Size:795K  ait semi
am8208.pdf pdf_icon

AM8206

AiT Semiconductor Inc. AM8208 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8208 uses advanced trench technology to V = 20V, I = 6A DS Dprovide excellent R , low gate charge and Typ.R = 17m @ V = 4.5V DS(ON) DS(ON) GSoperation with gate voltages as low as 2.5V. This Typ.R = 22m @ V = 2.5V DS(ON) GSdevice is suitable for use

 9.2. Size:827K  ait semi
am8205.pdf pdf_icon

AM8206

AiT Semiconductor Inc. AM8205 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8205 uses advanced trench technology to V = 20V, I = 6A DS Dprovide excellent R , low gate charge and R

 9.3. Size:812K  ait semi
am8204.pdf pdf_icon

AM8206

AiT Semiconductor Inc. AM8204 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM8204 uses advanced trench technology to V = 20V, I = 6A DS Dprovide excellent R , low gate charge and Typ.R = 17m @ V = 4.5V DS(ON) DS(ON) GSoperation with gate voltages as low as 2.5V. This Typ.R = 22m @ V = 2.5V DS(ON) GSdevice is suitable for use

Otros transistores... AM7961P , AM7962N , AM80N03-05D , AM80N03-06D , AM80N06-05D , AM80N20-40PCFM , AM8204 , AM8205 , 20N60 , AM8208 , AM8810 , AM8811 , AM8812 , AM8814 , AM8820 , AM8881 , AM8882 .

History: BRD2N60 | DMTH6004SCTB | 2SK529 | IRFSL3306PBF | BLP039N08-P | HIRF740 | SM1A02NSF

 

 
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