AM90N02-04D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM90N02-04D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 94 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO-252

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AM90N02-04D datasheet

 ..1. Size:65K  analog power
am90n02-04d.pdf pdf_icon

AM90N02-04D

Analog Power AM90N02-04D N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 3.8 @ VGS = 4.5V 94 converters and power management in portable and 20 4.6 @ VGS = 2.5V 86 ba

 8.1. Size:312K  analog power
am90n06-04m2b.pdf pdf_icon

AM90N02-04D

Analog Power AM90N06-04m2B N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 4.2 @ VGS = 10V Low thermal impedance 60 90a 4.8 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 8.2. Size:117K  analog power
am90n03-26p.pdf pdf_icon

AM90N02-04D

Analog Power AM90N03-26P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 26 @ VGS = 10V converters and power management in portable and 30 88a 40 @ VGS = 4.5V batter

 8.3. Size:206K  analog power
am90n06-30p.pdf pdf_icon

AM90N02-04D

Analog Power AM90N06-30P N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 26.5 @ VGS = 10V converters and power management in portable and 60 87a 32.5 @ VGS = 4.5V

Otros transistores... AM8814, AM8820, AM8881, AM8882, AM8958, AM8958C, AM8N20-600D, AM8N25-550D, IRFB4227, AM90N03-01P, AM90N03-02D, AM90N03-03B, AM90N03-03P, AM90N03-04D, AM90N03-04I, AM90N03-06B, AM90N03-08P