AM90N03-02D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM90N03-02D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO-252

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AM90N03-02D datasheet

 ..1. Size:57K  analog power
am90n03-02d.pdf pdf_icon

AM90N03-02D

Analog Power AM90N03-02D N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130 dissipation. Typical applications are DC-DC 30 converters and power management in portable and 3.2 @ VGS = 4.5V 103 bat

 5.1. Size:295K  analog power
am90n03-03p.pdf pdf_icon

AM90N03-02D

Analog Power AM90N03-03P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 3.5 @ VGS = 10V Low thermal impedance 30 90a 4.6 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

 5.2. Size:117K  analog power
am90n03-08p.pdf pdf_icon

AM90N03-02D

Analog Power AM90N03-08P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V converters and power management in portable and 30 90a 12 @ VGS = 4.5V battery

 5.3. Size:286K  analog power
am90n03-01p.pdf pdf_icon

AM90N03-02D

Analog Power AM90N03-01P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1.9 @ VGS = 10V Low thermal impedance 30 120a 2.9 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

Otros transistores... AM8881, AM8882, AM8958, AM8958C, AM8N20-600D, AM8N25-550D, AM90N02-04D, AM90N03-01P, 10N60, AM90N03-03B, AM90N03-03P, AM90N03-04D, AM90N03-04I, AM90N03-06B, AM90N03-08P, AM90N03-26P, AM90N04-01P