AM90N03-04D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM90N03-04D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 86 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 67 nC
Tiempo de subida (tr): 46 nS
Conductancia de drenaje-sustrato (Cd): 1104 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET AM90N03-04D
AM90N03-04D Datasheet (PDF)
am90n03-04d.pdf
Analog Power AM90N03-04DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)4.5 @ VGS = 10V86 Low thermal impedance 305.5 @ VGS = 4.5V78 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM
am90n03-04i.pdf
Analog Power AM90N03-04IN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 4.5 @ VGS = 10V 87converters and power management in portable and 305.5 @ VGS = 4.5V 78bat
am90n03-03p.pdf
Analog Power AM90N03-03PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)3.5 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB
am90n03-08p.pdf
Analog Power AM90N03-08PN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10Vconverters and power management in portable and 3090a12 @ VGS = 4.5Vbattery
am90n03-01p.pdf
Analog Power AM90N03-01PN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)1.9 @ VGS = 10V Low thermal impedance 30120a2.9 @ VGS = 4.5V Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB
am90n03-06b.pdf
Analog Power AM90N03-06BN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 6 @ VGS = 10Vconverters and power management such as 3090a7.2 @ VGS = 4.5Vcomputers, pri
am90n03-03b.pdf
Analog Power AM90N03-03BN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)3.8 @ VGS = 10V Low thermal impedance 3090a4.6 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM
am90n03-02d.pdf
Analog Power AM90N03-02DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat 2 @ VGS = 10V 130dissipation. Typical applications are DC-DC 30converters and power management in portable and 3.2 @ VGS = 4.5V 103bat
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
