AM90N03-26P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM90N03-26P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 88 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO-220AB

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AM90N03-26P datasheet

 ..1. Size:117K  analog power
am90n03-26p.pdf pdf_icon

AM90N03-26P

Analog Power AM90N03-26P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 26 @ VGS = 10V converters and power management in portable and 30 88a 40 @ VGS = 4.5V batter

 6.1. Size:295K  analog power
am90n03-03p.pdf pdf_icon

AM90N03-26P

Analog Power AM90N03-03P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 3.5 @ VGS = 10V Low thermal impedance 30 90a 4.6 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

 6.2. Size:117K  analog power
am90n03-08p.pdf pdf_icon

AM90N03-26P

Analog Power AM90N03-08P N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 8 @ VGS = 10V converters and power management in portable and 30 90a 12 @ VGS = 4.5V battery

 6.3. Size:286K  analog power
am90n03-01p.pdf pdf_icon

AM90N03-26P

Analog Power AM90N03-01P N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 1.9 @ VGS = 10V Low thermal impedance 30 120a 2.9 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits DRAIN connected Battery Powered Power Tools to TAB

Otros transistores... AM90N03-01P, AM90N03-02D, AM90N03-03B, AM90N03-03P, AM90N03-04D, AM90N03-04I, AM90N03-06B, AM90N03-08P, IRFP250N, AM90N04-01P, AM90N04-02P, AM90N04-03P, AM90N06-03B, AM90N06-03P, AM90N06-04D, AM90N06-04M2B, AM90N06-09B