AM90N06-10P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM90N06-10P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 567 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm

Encapsulados: TO-220AB

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AM90N06-10P datasheet

 ..1. Size:308K  analog power
 am90n06-10p.pdf pdf_icon

AM90N06-10P

Analog Power AM90N06-10P N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 9.9 @ VGS = 10V Low thermal impedance 60 90a 13 @ VGS = 4.5V Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conver

 0.1. Size:290K  analog power
 am90n06-10pcfm.pdf pdf_icon

AM90N06-10P

Analog Power AM90N06-10PCFM N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 9.9 @ VGS = 10V Low thermal impedance 60 64a 13.5 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

 5.1. Size:296K  analog power
 am90n06-16p.pdf pdf_icon

AM90N06-10P

Analog Power AM90N06-16P N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 16.5 @ VGS = 10V Low thermal impedance 60 90a 21 @ VGS = 4.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 5.2. Size:250K  analog power
 am90n06-15p.pdf pdf_icon

AM90N06-10P

Analog Power AM90N06-15P N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 10.5 @ VGS = 10V converters and power management in portable and 60 90a 13 @ VGS = 4.5V ba

MOSTRAR MÁS

Otros transistores... AM90N04-01P, AM90N04-02P, AM90N04-03P, AM90N06-03B, AM90N06-03P, AM90N06-04D, AM90N06-04M2B, AM90N06-09B, IRLB4132, AM90N06-10PCFM, AM90N06-15P, AM90N06-16P, AM90N06-19B, AM90N06-25PCFM, AM90N06-30P, AM90N08-04B, AM90N08-05P