AM90N06-10PCFM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM90N06-10PCFM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 79 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 565 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm
   Paquete / Cubierta: TO-220CFM

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AM90N06-10PCFM Datasheet (PDF)

..1. Size:290K analog power
am90n06-10pcfm.pdf

Analog Power AM90N06-10PCFMN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)9.9 @ VGS = 10V Low thermal impedance 6064a13.5 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI

3.1. Size:308K analog power
am90n06-10p.pdf

Analog Power AM90N06-10PN-Channel 60-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)9.9 @ VGS = 10V Low thermal impedance 6090a13 @ VGS = 4.5V Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conver

5.1. Size:296K analog power
am90n06-16p.pdf

Analog Power AM90N06-16PN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16.5 @ VGS = 10V Low thermal impedance 6090a21 @ VGS = 4.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

5.2. Size:250K analog power
am90n06-15p.pdf

Analog Power AM90N06-15PN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 10.5 @ VGS = 10Vconverters and power management in portable and 6090a13 @ VGS = 4.5Vba

5.3. Size:53K analog power
am90n06-19b.pdf

Analog Power AM90N06-19BN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 19 @ VGS = 10Vconverters and power management such as 6090a24 @ VGS = 4.5Vcomputers, pri

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