AM90N15-20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM90N15-20P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 521 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET AM90N15-20P

AM90N15-20P Datasheet (PDF)

..1. Size:294K analog power
am90n15-20p.pdf

Analog Power AM90N15-20PN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)24 @ VGS = 10V Low thermal impedance 15090a27 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

6.1. Size:319K analog power
am90n15-38b.pdf

Analog Power AM90N15-38BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)38 @ VGS = 10V Low thermal impedance 15090a46 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

8.1. Size:102K analog power
am90n10-14pcfm.pdf

Analog Power AM90N10-14PCFMN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 16 @ VGS = 10Vconverters and power management in portable and 10087a19 @ VGS = 5.5Vb

8.2. Size:453K analog power
am90n10-14p.pdf

Analog Power AM90N10-14PN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)16 @ VGS = 10V Low thermal impedance 10090a19 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

8.3. Size:124K analog power
am90n10-23p.pdf

Analog Power AM90N10-23PN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 23 @ VGS = 10Vconverters and power management in portable and 10090a28 @ VGS = 4.5Vbatt

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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