AM90N20-40P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM90N20-40P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 488 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-220AB

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AM90N20-40P datasheet

 ..1. Size:285K  analog power
am90n20-40p.pdf pdf_icon

AM90N20-40P

Analog Power AM90N20-40P N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 40 @ VGS = 10V Low thermal impedance 200 70a 46 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuit

 6.1. Size:316K  analog power
am90n20-78b.pdf pdf_icon

AM90N20-40P

Analog Power AM90N20-78B N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V Low thermal impedance 200 90a 92 @ VGS = 6V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RA

 9.1. Size:312K  analog power
am90n06-04m2b.pdf pdf_icon

AM90N20-40P

Analog Power AM90N06-04m2B N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 4.2 @ VGS = 10V Low thermal impedance 60 90a 4.8 @ VGS = 4.5V Fast switching speed Typical Applications Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS

 9.2. Size:102K  analog power
am90n10-14pcfm.pdf pdf_icon

AM90N20-40P

Analog Power AM90N10-14PCFM N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 16 @ VGS = 10V converters and power management in portable and 100 87a 19 @ VGS = 5.5V b

Otros transistores... AM90N08-05P, AM90N08-08P, AM90N08-10B, AM90N10-14P, AM90N10-14PCFM, AM90N10-23P, AM90N15-20P, AM90N15-38B, CS150N03A8, AM90N20-78B, AM90P03-02P, AM90P03-03P, AM90P04-03P, AM90P04-07P, AM90P06-06P, AM90P06-08P, AM90P06-20P