AM9435 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM9435

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.05 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.5 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: SOP-8

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AM9435 datasheet

 ..1. Size:486K  ait semi
am9435.pdf pdf_icon

AM9435

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-4.0A, R =60m (typ.)@V =-4.5V DS(ON) GS high cell density, advanced trench technology to Super high density cell desig

 ..2. Size:726K  axelite
am9435.pdf pdf_icon

AM9435

AM9435 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m @VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m @VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process

 0.1. Size:320K  analog power
am9435p.pdf pdf_icon

AM9435

Analog Power AM9435P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 49 @ VGS = -10V -6.5 Low thermal impedance -30 75 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.1. Size:118K  analog power
am9433p.pdf pdf_icon

AM9435

Analog Power AM9433P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3 converters and power management in portable and battery-powered products su

Otros transistores... AM90P10-30P, AM90P10-60B, AM90P15-30P, AM90P15-60P, AM90P20-170B, AM9410N, AM9412N, AM9433P, 20N50, AM9435P, AM9569D, AM9926, AM9926N, AM9945N, AM9945NE, AM9N65P, STN1012