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AM9435 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM9435
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.05 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.5 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SOP-8
 

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AM9435 Datasheet (PDF)

 ..1. Size:486K  ait semi
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AM9435

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-4.0A, R =60m(typ.)@V =-4.5V DS(ON) GShigh cell density, advanced trench technology to Super high density cell desig

 ..2. Size:726K  axelite
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AM9435

AM9435-30V P-Channel Enhancement Mode MOSFET DESCRIPTIONFEATUREThe AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m@VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m@VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process

 0.1. Size:320K  analog power
am9435p.pdf pdf_icon

AM9435

Analog Power AM9435PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)49 @ VGS = -10V -6.5 Low thermal impedance -3075 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.1. Size:118K  analog power
am9433p.pdf pdf_icon

AM9435

Analog Power AM9433PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3converters and power management in portable and battery-powered products su

Otros transistores... AM90P10-30P , AM90P10-60B , AM90P15-30P , AM90P15-60P , AM90P20-170B , AM9410N , AM9412N , AM9433P , 2N60 , AM9435P , AM9569D , AM9926 , AM9926N , AM9945N , AM9945NE , AM9N65P , STN1012 .

History: IPA105N15N3 | TPU65R1K5M | IPD50N10S3L-16 | 65N06A | SPN05T10 | IXTQ50N20P | NCE60P45K

 

 
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