AM9435P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM9435P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
Paquete / Cubierta: SO-8
- Selección de transistores por parámetros
AM9435P Datasheet (PDF)
am9435p.pdf

Analog Power AM9435PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)49 @ VGS = -10V -6.5 Low thermal impedance -3075 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am9435.pdf

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-4.0A, R =60m(typ.)@V =-4.5V DS(ON) GShigh cell density, advanced trench technology to Super high density cell desig
am9435.pdf

AM9435-30V P-Channel Enhancement Mode MOSFET DESCRIPTIONFEATUREThe AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m@VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m@VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process
am9433p.pdf

Analog Power AM9433PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3converters and power management in portable and battery-powered products su
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP33N65M2 | STP55N06L | RFL1N10L
History: STP33N65M2 | STP55N06L | RFL1N10L



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