AM9435P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM9435P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: SO-8

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AM9435P Datasheet (PDF)

..1. Size:320K analog power
am9435p.pdf

Analog Power AM9435PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)49 @ VGS = -10V -6.5 Low thermal impedance -3075 @ VGS = -4.5V -5.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

8.1. Size:486K ait semi
am9435.pdf

AM9435 AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM9435 is the P-Channel logic enhancement -30V/-5.8A, R =38m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-4.0A, R =60m(typ.)@V =-4.5V DS(ON) GShigh cell density, advanced trench technology to Super high density cell desig

8.2. Size:726K axelite
am9435.pdf

AM9435-30V P-Channel Enhancement Mode MOSFET DESCRIPTIONFEATUREThe AM9435 is the P-Channel logic enhancement -30V/-5.2A, RDS(ON) 60m@VGS = -10V mode power field effect transistors are produced -30V/-4.0A, RDS(ON) 90m@VGS = -4.5V using high cell density, DMOS trench technology. Super high density cell design for extremely low This high density process

9.1. Size:118K analog power
am9433p.pdf

Analog Power AM9433PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = -4.5V -8.3converters and power management in portable and battery-powered products su

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTP3N120

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