STN2300A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STN2300A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.5 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SOT-23

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STN2300A datasheet

 ..1. Size:368K  semtron
 stn2300a.pdf pdf_icon

STN2300A

STN2300A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300A is the N-Channel logic 20V/4.0A, RDS(ON) =22m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/3.0A, RDS(ON) =25m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.0A, RDS(ON) =33m (typ.)@VGS =1.8V technology to provide excellent RD

 7.1. Size:367K  semtron
 stn2300.pdf pdf_icon

STN2300A

STN2300 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2300 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =26m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =35m (typ.)@VGS =2.5V high cell density. advanced trench technology to 20V/2.0A, RDS(ON) =50m (typ.)@VGS =1.8V provide excellent RDS

 8.1. Size:151K  semtron
 stn2306.pdf pdf_icon

STN2300A

STN2306 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2306 is the N-Channel logic enhancement 30V/3.6A, RDS(ON)= 45m (typ.)@VGS= 10V mode power field effect transistor is produced using 30V/2.8A, RDS(ON)= 55m (typ.)@VGS= 4.5V high cell density. advanced trench technology to Super high density cell design for extremely provide excellent RDS(ON)

 8.2. Size:367K  semtron
 stn2302.pdf pdf_icon

STN2300A

STN2302 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STN2302 is the N-Channel logic enhancement 20V/4.0A, RDS(ON) =50m (typ.)@VGS =4.5V mode power field effect transistor is produced using 20V/3.0A, RDS(ON) =65m (typ.)@VGS =2.5V high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and Super high densi

MOSTRAR MÁS

Otros transistores... AM9N65P, STN1012, STN1304, STN1810, STN18D20, STN1NF20, STN2018, STN2300, IRFZ46N, STN2302, STN2306, STN2342, STN2342A, STN2NE10, STN2NE10L, STN3400, STN3400A