STN4488L Todos los transistores

 ..1. Size:639K  stansontech
 stn4488l.pdf

STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/20A, RDS(ON) = 3.8m (Typ.) @

 8.1. Size:743K  stansontech
 stn4480.pdf

STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an

 9.1. Size:356K  stansontech
 stn4402.pdf

STN4402 STN4402 STN4402 STN4402 N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f

 9.2. Size:806K  stansontech
 stn4412.pdf

STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

 9.3. Size:853K  stansontech
 stn4438.pdf

STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

 9.4. Size:718K  stansontech
 stn442d.pdf

STN442D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION (D-PAK) l 60V/20.0A, R = 24m (Typ.) TO-252 DS(ON) @VGS = 10V l 60V/20.0A, R = 31m DS(ON) @VGS = 4.5V l Super high density ce

 9.5. Size:958K  stansontech
 stn4416.pdf

STN4416 STN4416 STN4416 STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f

 9.6. Size:749K  stansontech
 stn4440.pdf

STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

 9.7. Size:353K  stansontech
 stn4426.pdf

STN4426 STN4426 STN4426 STN4426 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

 9.8. Size:1242K  umw-ic
 stn4438.pdf

R UMW UMW STN4438 8.2A N Channel Enhancement Mode MOSFET DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manage