STN4488L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STN4488L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 84 nC
   trⓘ - Tiempo de subida: 9.8 nS
   Cossⓘ - Capacitancia de salida: 760 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET STN4488L

STN4488L Datasheet (PDF)

..1. Size:639K stansontech
stn4488l.pdf

STN4488L N Channel Enhancement Mode MOSFET 20.0A DESCRIPTION STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/20A, RDS(ON) = 3.8m (Typ.) @

8.1. Size:743K stansontech
stn4480.pdf

STN4480 N Channel Enhancement Mode MOSFET 14.0A DESCRIPTION STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management an

9.1. Size:356K stansontech
stn4402.pdf

STN4402STN4402STN4402STN4402N Channel Enhancement Mode MOSFET12ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4402 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

9.2. Size:806K stansontech
stn4412.pdf

STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

9.3. Size:853K stansontech
stn4438.pdf

STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

9.4. Size:718K stansontech
stn442d.pdf

STN442D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. FEATURE PIN CONFIGURATION (D-PAK) l 60V/20.0A, R = 24m (Typ.) TO-252 DS(ON) @VGS = 10V l 60V/20.0A, R = 31m DS(ON) @VGS = 4.5V l Super high density ce

9.5. Size:958K stansontech
stn4416.pdf

STN4416STN4416STN4416STN4416N Channel Enhancement Mode MOSFET10ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4416 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited f

9.6. Size:749K stansontech
stn4440.pdf

STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and

9.7. Size:353K stansontech
stn4426.pdf

STN4426STN4426STN4426STN4426N Channel Enhancement Mode MOSFET8.0ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4426 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

9.8. Size:1242K umw-ic
stn4438.pdf

RUMWUMW STN44388.2A N Channel Enhancement Mode MOSFET DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power manage

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDS2672F085

Liste

Recientemente añadidas las descripciónes de los transistores: