STN4842 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STN4842
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 38.7 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP-8

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STN4842 Datasheet (PDF)

..1. Size:374K semtron
stn4842.pdf

STN4842 30V Dual N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STN4842 is the Dual N-Channel logic 30V / 7.8A, RDS(ON) =16m(typ.)@VGS =10V enhancement mode power field effect transistor is 30V / 5.8A, RDS(ON) =24m(typ.)@VGS =4.5V produced using high cell density. advanced trench Super high density cell design for extremely low technology to pr

8.1. Size:544K stansontech
stn484d.pdf

STN484D N Channel Enhancement Mode MOSFET 30.0A DESCRIPTION STN484D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN484D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

9.1. Size:508K stansontech
stn4822.pdf

STN4822STN4822STN4822STN4822Dual N Channel Enhancement Mode MOSFET8.5ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4822 is the Dual N-Channel logic enhancement mode power field effect transistorswhich are produced using high cell density DMOS trench technology. It is suitable forthe power management applications in the portable or battery powered system.PIN CONFIGURA

9.2. Size:681K stansontech
stn4826.pdf

STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook comput

9.3. Size:506K stansontech
stn4828.pdf

STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook compu

9.4. Size:524K stansontech
stn4850.pdf

STN4850STN4850STN4850STN4850N Channel Enhancement Mode MOSFET7.2ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONSTN4850 is the N-Channel logic enhancement mode power field effect transistorwhich is produced using high cell density, DMOS trench technology. This high densityprocess is especially tailored to minimize on-state resistance. These devices areparticularly suited

9.5. Size:952K cn vbsemi
stn4828.pdf

STN4828www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

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