STN4972 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STN4972
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 258 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de STN4972 MOSFET
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STN4972 datasheet
stn4972.pdf
STN4972 STN4972 STN4972 STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION STN4972 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURA
stn4920.pdf
STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION FEATURE SOP-8 30V/7.2A, RDS(ON) = 28m @VGS
stn4946.pdf
STN4946 STN4946 STN4946 STN4946 Dual N Channel Enhancement Mode MOSFET 12A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particular
Otros transistores... STN4822, STN4826, STN4828, STN4842, STN484D, STN4850, STN4920, STN4946, IRF9540, STN5PF02V, STN6303, STN6562, STN7400, STN80T08, STN8822, STN8822A, STN8882D
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