STP12N50M2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP12N50M2 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.5 nS
Cossⓘ - Capacitancia de salida: 33 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO-220
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STP12N50M2 datasheet
..1. Size:618K st
stp12n50m2.pdf 
STP12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 Low gate input resistance 2 1 100% avalanche tested TO-220 Zener-protected Appl
8.1. Size:391K st
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STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F
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STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 5
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STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a D PAK, TO-220 and TO-220FP packages Features TAB VDS RDS(on) max. ID Order codes 3 1 2 D PAK 3 STB12NM50T4 2 1 TO-220FP TAB STP12NM50 500 V 350 m 12 A STP12NM50FP 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate inp
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stp12nm50fp.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP12NM50FP FEATURES Drain-source on-resistance RDS(on) 0.35 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for increasing power density of high voltage converters allowing system miniaturization and
Otros transistores... STP11N65M2, STP11N65M5, STP11NM60A, STP11NM60FDFP, STP11NM60FP, STP11NM60N, STP11NM65N, STP120NH03L, IRFP250, STP12N60M2, STP12NM50FD, STP12NM50FP, STP12NM50N, STP12NM60N, STP130N10F3, STP13N60M2, STP13N65M2
