STP13NM50N Todos los transistores

 ..1. Size:578K  st
 stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N

 ..2. Size:577K  st
 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB13NM50N 550 V 0.32 12 A TO-220 I PAK STB13NM50N-1 550 V 0.32 12 A STF13NM50N 550 V 0.32 12 A(1) 3 2 1 STP13NM50N 550 V 0.32 12 A TO-247 STW13N

 7.1. Size:1276K  st
 stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf

STB13NM60N,STD13NM60N,STF13NM60N STP13NM60N,STW13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STB13NM60N 650 V

 7.2. Size:1546K  st
 std13nm60nd stf13nm60nd stp13nm60nd.pdf

STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best RDS(on)* area among fast recove

 7.3. Size:984K  st
 stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features TAB VDSS RDS(on) Order codes ID (@Tjmax) max 3 3 2 2 1 STF13NM60N 1 I PAK TO-220FP STI13NM60N STP13NM60N 650 V

 7.4. Size:189K  inchange semiconductor
 stp13nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP13NM60N FEATURES Typical R (on)=0.28 DS Low gate input resistance 100% avalanche tested Low input capacitance and gate charge Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 7.5. Size:208K  inchange semiconductor
 stp13nm60nd.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor STP13NM60ND FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA