STP1433A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP1433A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 3
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.9
nS
Cossⓘ - Capacitancia
de salida: 55
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12
Ohm
Paquete / Cubierta:
SOT-353
- Selección de transistores por parámetros
STP1433A
Datasheet (PDF)
..1. Size:194K stansontech
stp1433a.pdf 
ST1433A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST1433A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not
9.1. Size:673K st
stp14nk50z.pdf 
STP14NK50Z, STP14NK50ZFPSTB14NK50Z, STB14NK50Z-1, STW14NK50ZN-CHANNEL500V-0.34-14ATO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP14NK50Z 500 V
9.2. Size:1281K st
stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf 
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
9.3. Size:672K st
stp14nk60z.pdf 
STP14NK60Z - STP14NK60ZFPSTB14NK60Z - STB14NK60Z-1 - STW14NK60ZN-CHANNEL 600V-0.45-13.5A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP14NK60Z 600 V
9.4. Size:618K st
stb14nk50z-1 stb14nk50zt4 stp14nk50zfp.pdf 
STP14NK50Z - STP14NK50ZFPSTB14NK50Z-STB14NK50Z-1-STW14NK50ZN-channel 500V - 0.34 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESHTM Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP14NK50Z 500V
9.6. Size:263K st
stp14nf10.pdf 
STP14NF10N-channel 100 V - 0.115 - 15 A - TO-220low gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) max IDSTP14NF10 100 V
9.8. Size:1066K st
stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf 
STB14NM50N, STD14NM50NSTF14NM50N, STP14NM50NN-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFETin DPAK, D2PAK, TO-220 and TO-220FPFeaturesVDSS @ RDS(on) Type ID3TJmax max13STB14NM50N2DPAK1STD14NM50N550 V
9.9. Size:616K st
stb14nk60zt4 stp14nk60zfp stw14nk60z.pdf 
STP14NK60Z - STP14NK60ZFPSTB14NK60Z/-1 - STW14NK60ZN-channel 600V - 0.45 - 13.5A TO-220/FP-D2/I2PAK-TO-247Zener-protected SuperMESHTM Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP14NK60Z 600V
9.11. Size:362K st
stb141nf55 stb141nf55-1 stp141nf55.pdf 
STB141NF55 - STB141NF55-1STP141NF55N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220STripFET II Power MOSFETFeaturesType VDSS RDS(on) ID (1)STB141NF55 55V
9.12. Size:975K st
stb14nk60zt4 stp14nk60zfp.pdf 
STB14NK60ZT4, STP14NK60ZFPN-channel 600 V, 0.45 typ.,13.5 A SuperMESH Power MOSFETs in D2PAK and TO-220FP packagesDatasheet - production dataFeatures RDS(on) Order codes VDS max. ID PTOTTABSTB14NK60ZT4 160 W 600 V 0.5 13.5 A 31 STP14NK60ZFP 40 W321D2PAK Extremely high dv/dt capabilityTO-220FP 100% avalanche tested Gate charge minimized
9.15. Size:345K st
stp14nf12.pdf 
STP14NF12STP14NF12FPN-CHANNEL 120V - 0.16 - 14A TO-220/TO-220FPLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP14NF12 120 V
9.16. Size:582K st
stp140n8f7.pdf 
STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications
9.17. Size:481K st
stb140nf55 stb140nf55-1 stp140nf55.pdf 
STB140NF55 - STB140NF55-1STP140NF55N-channel 55V - 0.0065 - 80A - D2PAK - I2PAK - TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID (1)STB140NF55 55V
9.18. Size:313K st
stp14nf12 stp14nf12fp.pdf 
STP14NF12STP14NF12FPN-channel 120V - 0.16 - 14A - TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP14NF12 120V
9.19. Size:256K st
stp140n6f7.pdf 
STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP140N6F7 60 V 0.0035 80 A 158 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications
9.20. Size:517K st
stp140nf75.pdf 
STP140NF75STB140NF75 - STB140NF75-1N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB140NF75 75V
9.21. Size:1269K st
stf14nm50n sti14nm50n stp14nm50n.pdf 
STF14NM50N, STI14NM50N,STP14NM50NN-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETsin TO-220FP, IPAK and TO-220 packagesDatasheet - production dataFeatures VDS @ RDS(on) Order codes IDTJmax max3STF14NM50N21STI14NM50N 550 V 0.32 12 A TO-220FPSTP14NM50NTABTAB 100% avalanche tested Low input capacitance and gate charge33TO-220 2I
9.22. Size:247K st
stp14nf06.pdf 
STP14NF06N-CHANNEL 60V - 0.1 - 14A TO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP14NF10 60 V
9.23. Size:649K stansontech
stp1413a.pdf 
ST1413A P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST1413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not
9.24. Size:260K inchange semiconductor
istp140n6f7.pdf 
isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
9.25. Size:262K inchange semiconductor
stp140nf75.pdf 
isc N-Channel MOSFET Transistor STP140NF75FEATURESDrain Current : I =120A@ T =25D CDrain Source Voltage: V =75V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSmotor drive, DC-DC converter, power switchand solenoid drive.A
Otros transistores... WPB4002
, FDM15-06KC5
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, FMM22-06PF
.
History: SI1405BDH
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