STP150N10F7 Todos los transistores

 

STP150N10F7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STP150N10F7
   Código: 150N10F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 117 nC
   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 1510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-220

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STP150N10F7 Datasheet (PDF)

 ..1. Size:824K  st
sti150n10f7 stp150n10f7.pdf

STP150N10F7
STP150N10F7

STI150N10F7, STP150N10F7N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 Power MOSFETs in I2PAK and TO-220 packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max ID PTOTSTI150N10F7100 V 0.0042 110 A 250 WSTP150N10F7TABTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity33

 ..2. Size:259K  inchange semiconductor
stp150n10f7.pdf

STP150N10F7
STP150N10F7

isc N-Channel MOSFET Transistor STP150N10F7FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 7.1. Size:945K  st
std150n3llh6 stp150n3llh6 stu150n3llh6.pdf

STP150N10F7
STP150N10F7

STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

 7.2. Size:564K  st
stb150nf55 stp150nf55 stw150nf55.pdf

STP150N10F7
STP150N10F7

STB150NF55STP150NF55 - STW150NF55N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB150NF55 55V

 7.3. Size:391K  st
stp150nf04.pdf

STP150N10F7
STP150N10F7

STP150NF04N-channel 40 V, 0.005 typ., 80 A STripFETII Power MOSFET in a TO-220 packageDatasheet production dataFeaturesRDS(on) Type VDSS IDTABmaxSTP150NF04 40 V

 7.4. Size:495K  st
stb150nf04 stp150nf04.pdf

STP150N10F7
STP150N10F7

STB150NF04STP150NF04N-channel 40 V, 0.005 , 80 A, TO-220, D2PAKSTripFETII Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTB150NF04 40 V

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