IXFH60N25Q Todos los transistores

 ..1. Size:71K  ixys
 ixfh60n25q ixfk60n25q ixft60n25q.pdf

Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 250

 7.1. Size:157K  ixys
 ixfh60n60x2a.pdf

X2-Class HiPerFETTM VDSS = 600V IXFH60N60X2A Power MOSFET ID25 = 60A RDS(on) 52m AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 600 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S = Source Ta

 7.2. Size:113K  ixys
 ixfh60n65x2.pdf

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH60N65X2 Power MOSFET ID25 = 60A RDS(on) 52m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =

 7.3. Size:166K  ixys
 ixfh60n60x ixfq60n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1

 7.4. Size:302K  inchange semiconductor
 ixfh60n60x2a.pdf

isc N-Channel MOSFET Transistor IXFH60N60X2A FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.5. Size:260K  inchange semiconductor
 ixfh60n60x.pdf

isc N-Channel MOSFET Transistor IXFH60N60X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga