IRFR3505PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR3505PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 74 nS

Cossⓘ - Capacitancia de salida: 470 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO-252AA

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IRFR3505PBF datasheet

 ..1. Size:332K  international rectifier
 irfr3505pbf irfu3505pbf.pdf pdf_icon

IRFR3505PBF

PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis

 6.1. Size:588K  international rectifier
 irfr3505.pdf pdf_icon

IRFR3505PBF

PD - 94506A IRFR3505 AUTOMOTIVE MOSFET IRFU3505 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.013 Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilize

 6.2. Size:241K  inchange semiconductor
 irfr3505.pdf pdf_icon

IRFR3505PBF

isc N-Channel MOSFET Transistor IRFR3505, IIRFR3505 FEATURES Static drain-source on-resistance RDS(on) 13m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

 7.1. Size:593K  international rectifier
 irfr3504.pdf pdf_icon

IRFR3505PBF

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 9.2m G Description Specifically designed for Automotive applications, this HEXFET ID = 30A Power MOSFET utilizes the l

MOSTRAR MÁS

Otros transistores... STP270N04, IRFR3303PBF, IRFR3410PBF, IRFR3411PBF, IRFR3412PBF, IRFR3418PBF, IRFR3504PBF, IRFR3504ZPBF, AO3401, IRFR3518PBF, IRFR3607PBF, IRFR3704, IRFR3704PBF, IRFR3704ZPBF, IRFR3706, IRFR3706CPBF, IRFR3706PBF