IRFR3518PBF Todos los transistores

 ..1. Size:228K  international rectifier
 irfr3518pbf irfu3518pbf.pdf

PD - 95510A IRFR3518PbF IRFU3518PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Lead-Free 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

 6.1. Size:547K  international rectifier
 irfr3518.pdf

PD - 94523 IRFR3518 IRFU3518 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3518 IRFU3518

 6.2. Size:242K  inchange semiconductor
 irfr3518.pdf

isc N-Channel MOSFET Transistor IRFR3518, IIRFR3518 FEATURES Static drain-source on-resistance RDS(on) 29m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-

 8.1. Size:593K  international rectifier
 irfr3504.pdf

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 9.2m G Description Specifically designed for Automotive applications, this HEXFET ID = 30A Power MOSFET utilizes the l

 8.2. Size:332K  international rectifier
 irfr3505pbf irfu3505pbf.pdf

PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis

 8.3. Size:228K  international rectifier
 auirfr3504.pdf

PD - 97687A AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated max 9.2m G l Repetitive Avalanche Allowed ID (Silicon Limited) 87A up to Tjmax S ID (Package Limited) l Lead-Free, RoHS Compliant 56A l Automotiv

 8.4. Size:324K  international rectifier
 irfr3504pbf.pdf

PD - 95315B IRFR3504PbF IRFU3504PbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.2m G Description This HEXFET Power MOSFET utilizes the latest processing ID = 30A techniques to achieve extremely low on-resistan

 8.5. Size:588K  international rectifier
 irfr3505.pdf

PD - 94506A IRFR3505 AUTOMOTIVE MOSFET IRFU3505 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.013 Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilize

 8.6. Size:331K  international rectifier
 irfr3504zpbf.pdf

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 8.7. Size:268K  international rectifier
 auirfr3504ztr.pdf

PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifical

 8.8. Size:331K  international rectifier
 irfr3504zpbf irfu3504zpbf.pdf

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 8.9. Size:664K  infineon
 auirfr3504z.pdf

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description

 8.10. Size:242K  inchange semiconductor
 irfr3504z.pdf

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504Z FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate

 8.11. Size:241K  inchange semiconductor
 irfr3505.pdf

isc N-Channel MOSFET Transistor IRFR3505, IIRFR3505 FEATURES Static drain-source on-resistance RDS(on) 13m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-