IRFR3711ZPBF Todos los transistores

 

IRFR3711ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFR3711ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 93 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-252AA
     - Selección de transistores por parámetros

 

IRFR3711ZPBF Datasheet (PDF)

 ..1. Size:262K  international rectifier
 irfr3711zpbf irfu3711zpbf.pdf pdf_icon

IRFR3711ZPBF

PD - 95074AIRFR3711ZPbFIRFU3711ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-PakI

 5.1. Size:215K  international rectifier
 irfr3711z.pdf pdf_icon

IRFR3711ZPBF

PD - 94651AIRFR_U3711ZIRFR_U3711ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m: 18nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avala

 5.2. Size:297K  international rectifier
 irfr3711zcpbf.pdf pdf_icon

IRFR3711ZPBF

PD - 96050IRFR3711ZCPbFIRFU3711ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

 5.3. Size:243K  inchange semiconductor
 irfr3711z.pdf pdf_icon

IRFR3711ZPBF

isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711ZFEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTL2x200N085T | S60N15RP | FQD4N50TM | BLM12N08-B | 2SK4064LS | FQPF4P40 | IXTR90P20P

 

 
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