IRFR3711ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR3711ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 93 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.45 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-252AA

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IRFR3711ZPBF Datasheet (PDF)

..1. Size:262K international rectifier
irfr3711zpbf irfu3711zpbf.pdf

PD - 95074AIRFR3711ZPbFIRFU3711ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-PakI

..2. Size:262K infineon
irfr3711zpbf irfu3711zpbf.pdf

5.1. Size:215K international rectifier
irfr3711z.pdf

PD - 94651AIRFR_U3711ZIRFR_U3711ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC20V 5.7m: 18nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avala

5.2. Size:297K international rectifier
irfr3711zcpbf.pdf

PD - 96050IRFR3711ZCPbFIRFU3711ZCPbFApplications HEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl High Frequency Isolated DC-DC20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate ImpedanceD-Pak I-Pakl

5.3. Size:243K inchange semiconductor
irfr3711z.pdf

isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711ZFEATURESStatic drain-source on-resistance:RDS(on)5.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

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