IRFR3911PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR3911PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO-252AA

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IRFR3911PBF Datasheet (PDF)

..1. Size:225K international rectifier
irfr3911pbf irfu3911pbf.pdf

PD - 95373AIRFR3911PbFSMPS MOSFET IRFU3911PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.115 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I

6.1. Size:102K international rectifier
irfr3911.pdf

PD - 94272IRFR3911SMPS MOSFET IRFU3911HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.115 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR3

7.1. Size:141K international rectifier
irfr3910.pdf

PD - 91364BIRFR/U3910HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR3910)VDSS = 100V Straight Lead (IRFU3910) Advanced Process TechnologyRDS(on) = 0.115 Fast SwitchingG Fully Avalanche RatedID = 16ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resi

7.2. Size:392K international rectifier
irfr3910pbf irfu3910pbf.pdf

PD - 95079AIRFR3910PbFIRFU3910PbF Lead-Freewww.irf.com 11/7/05IRFR/U3910PbF2 www.irf.comIRFR/U3910PbFwww.irf.com 3IRFR/U3910PbF4 www.irf.comIRFR/U3910PbFwww.irf.com 5IRFR/U3910PbF6 www.irf.comIRFR/U3910PbFwww.irf.com 7IRFR/U3910PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

7.3. Size:392K infineon
irfr3910pbf irfu3910pbf.pdf

7.4. Size:856K cn vbsemi
irfr3910tr.pdf

IRFR3910TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

7.5. Size:242K inchange semiconductor
irfr3910.pdf

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910FEATURESStatic drain-source on-resistance:RDS(on)115mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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