IRFR4104PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR4104PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO-252AA

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IRFR4104PBF datasheet

 ..1. Size:324K  international rectifier
 irfr4104pbf irfu4104pbf.pdf pdf_icon

IRFR4104PBF

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on

 6.1. Size:317K  international rectifier
 auirfr4104tr.pdf pdf_icon

IRFR4104PBF

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

 6.2. Size:715K  infineon
 auirfr4104 auirfu4104.pdf pdf_icon

IRFR4104PBF

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 6.3. Size:1024K  cn vbsemi
 irfr4104trpbf.pdf pdf_icon

IRFR4104PBF

IRFR4104TRPBF www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMU

MOSTRAR MÁS

Otros transistores... IRFR3710ZPBF, IRFR3711, IRFR3711PBF, IRFR3711ZCPBF, IRFR3711ZPBF, IRFR3806PBF, IRFR3910PBF, IRFR3911PBF, AO4407, IRFR4105PBF, IRFR4105ZPBF, STP270N4F3, STP270N8F7, STP28N60M2, STP28N65M2, STP28NM60ND, STP2N105K5