IRFR4105ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR4105ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0245 Ohm

Encapsulados: TO-252AA

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IRFR4105ZPBF datasheet

 ..1. Size:330K  international rectifier
 irfr4105zpbf irfu4105zpbf.pdf pdf_icon

IRFR4105ZPBF

PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 5.1. Size:317K  international rectifier
 auirfr4105ztr.pdf pdf_icon

IRFR4105ZPBF

PD - 97544 AUTOMOTIVE GRADE AUIRFR4105Z AUIRFU4105Z HEXFET Power MOSFET Features D Advanced Process Technology V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 24.5m G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID S 30A Lead-Free, RoHS Compliant Automotive Qualified * Description D Specifically de

 5.2. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf pdf_icon

IRFR4105ZPBF

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 5.3. Size:797K  cn vbsemi
 irfr4105ztr.pdf pdf_icon

IRFR4105ZPBF

IRFR4105ZTR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

MOSTRAR MÁS

Otros transistores... IRFR3711PBF, IRFR3711ZCPBF, IRFR3711ZPBF, IRFR3806PBF, IRFR3910PBF, IRFR3911PBF, IRFR4104PBF, IRFR4105PBF, 4N60, STP270N4F3, STP270N8F7, STP28N60M2, STP28N65M2, STP28NM60ND, STP2N105K5, STP2N80K5, STP2N95K5