STP3407 Todos los transistores

 ..1. Size:364K  semtron
 stp3407.pdf

STP3407 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =38m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =58m (typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell desig

 8.1. Size:372K  semtron
 stp3401a.pdf

STP3401A -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401A is the P-Channel logic -30V/-4.3A, RDS(ON) =50m (typ.)@VGS =-10V enhancement mode power field effect transistor is -30V/-3.5A, RDS(ON) =58m (typ.)@VGS =-4.5V produced using high cell density. advanced trench -30V/-2.5A, RDS(ON) =73m (typ.)@VGS =-2.5V technology to provide exc

 8.2. Size:372K  semtron
 stp3401.pdf

STP3401 -30V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The STP3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m (typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m (typ.)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m (typ.)@VGS =-2.5V provide exce

 9.1. Size:510K  st
 stf34nm60n stp34nm60n stw34nm60n.pdf

STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFET TO-220, TO-247, TO-220FP Preliminary data Features RDS(on) Type VDSS ID PTOT max. 3 3 2 2 STF34NM60N 600 V 0.105 29 A 40 W 1 1 STP34NM60N 600 V 0.105 29 A 210 W TO-247 TO-220 STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested 3 Low input capacitance and ga

 9.2. Size:1424K  st
 stb34n65m5 sti34n65m5 stp34n65m5 stw34n65m5.pdf

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 2 3 1 3 2 1 STB34N65M5 D2PAK I2PAK STI34N65M5 710 V 0.11 28 A TAB STP34N65M5 STW34N65M5 Worldwide best RDS(on) * area 3 3 2

 9.3. Size:1236K  st
 stw34nm60nd stb34nm60nd stf34nm60nd stp34nm60nd.pdf

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB Order codes VDS @TJ max. RDS(on) max. ID 3 1 STB34NM60ND 3 2 1 D2PAK STF34NM60ND TO-220FP 650 V 0.110 29 A STP34NM60ND TAB STW34NM60ND The world s bes

 9.4. Size:1315K  st
 stb34n65m5 stf34n65m5 stfi34n65m5 stp34n65m5 stw34n65m5.pdf

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDSS @ RDS(on) Order codes ID 2 TJmax max 3 1 3 STB34N65M5 2 D2PAK 1 TO-220FP STF34N65M5 I2PAKFP STFI34N65M5 TAB TAB 710 V

 9.5. Size:1363K  st
 stb34nm60n stp34nm60n.pdf

STB34NM60N, STP34NM60N N-channel 600 V, 0.092 , 31.5 A MDmesh II Power MOSFETs in D PAK and TO-220 packages Datasheet - production data Features Order codes VDSS RDS(on) ID PTOT TAB STB34NM60N TAB 600 V 0.105 31.5 A 250 W STP34NM60N 2 100% avalanche tested 3 3 1 2 Low input capacitance and gate charge 1 2 D PAK Low gate input resistance TO-220 Ap

 9.6. Size:383K  stansontech
 stp3481.pdf

STP3481 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

 9.7. Size:807K  stansontech
 stp3467.pdf

STP3467 STP3467 STP3467 STP3467 P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STP3467 is the P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited f