2SJ484 Todos los transistores

 

2SJ484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ484

Código: WY

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 140 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: UPAK

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2SJ484 Datasheet (PDF)

1.1. 2sj484.pdf Size:79K _renesas

2SJ484
2SJ484

2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 ? typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A R (Package name: UPAK ) D 1 2 1. Gate

1.2. rej03g0868 2sj484ds.pdf Size:92K _renesas

2SJ484
2SJ484

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.1. 2sj485.pdf Size:43K _sanyo

2SJ484
2SJ484

Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ485] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ485] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.2. 2sj486.pdf Size:79K _renesas

2SJ484
2SJ484

2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 (Previous: ADE-208-512A) Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features Low on-resistance RDS (on) = 0.5 ? typ. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1. Source G 2. Gate 1 3.

 5.3. 2sj48 2sj49 2sj50.pdf Size:192K _hitachi

2SJ484
2SJ484

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Otros transistores... 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , IRFBC40 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 2SJ526 .

 
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