2SJ484 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ484
   Código: WY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: UPAK

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2SJ484 Datasheet (PDF)

..1. Size:79K renesas
2sj484.pdf

2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )

0.1. Size:92K renesas
rej03g0868 2sj484ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.1. Size:47K 1
2sj483.pdf

2SJ483Silicon P Channel MOS FETHigh Speed Power SwitchingADE-208-5191st. EditionFeatures Low on-resistanceRDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SJ483Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDra

9.2. Size:43K sanyo
2sj485.pdf

Ordering number:ENN6434P-Channel Silicon MOSFET2SJ485Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ485]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ485]6.5 2.35.0 0.540.5

9.3. Size:79K renesas
2sj486.pdf

2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 (Previous: ADE-208-512A) Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features Low on-resistance RDS (on) = 0.5 typ. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG

9.4. Size:192K hitachi
2sj48 2sj49 2sj50.pdf

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9.5. Size:832K cn vbsemi
2sj485.pdf

2SJ485www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol

Otros transistores... 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , IRF530 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 , 2SJ517 , 2SJ518 , 2SJ526 .

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