STP4403 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP4403

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: SOP-8

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STP4403 datasheet

 ..1. Size:253K  stansontech
 stp4403.pdf pdf_icon

STP4403

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

 8.1. Size:258K  samhop
 stb440s stp440s.pdf pdf_icon

STP4403

Green Product STB/P440S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8 @ VGS=10V TO-220 & TO-263 package. 40V 65A 11.5 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263

 8.2. Size:821K  stansontech
 stp4407a.pdf pdf_icon

STP4403

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 8.3. Size:579K  stansontech
 stp4407.pdf pdf_icon

STP4403

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

MOSTRAR MÁS

Otros transistores... STP3NK50Z, STP3NK90ZFP, STP400N4F6, STP40N20, STP40N60M2, STP40N65M2, STP40NS15, STP413D, 20N60, STP4407, STP4407A, STP4435, STP4435A, STP45N10F7, STP45N65M5, STP45NE06, STP45NE06FP