STP45NE06FP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP45NE06FP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 35 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Encapsulados: TO-220FP
Búsqueda de reemplazo de STP45NE06FP MOSFET
- Selecciónⓘ de transistores por parámetros
STP45NE06FP datasheet
..1. Size:68K st
stp45ne06 stp45ne06fp.pdf 
STP45NE06 STP45NE06FP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06 60 V
5.1. Size:90K st
stp45ne06.pdf
STP45NE06 STP45NE06FP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06 60 V
5.2. Size:88K st
stp45ne06l.pdf
STP45NE06L STP45NE06LFP N - CHANNEL 60V - 0.022 - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NE06L 60 V
8.1. Size:356K st
stb45nf06t4 stb45nf06 stp45nf06.pdf
STB45NF06 STP45NF06 N-channel 60 V, 0.023 , 38 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP45NF06 60 V
8.2. Size:527K st
stp45nf3ll.pdf
STP45NF3LL - STP45NF3LLFP STB45NF3LL N-CHANNEL 30V - 0.014 - 45A TO-220 - TO220FP - D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP45NF3LL 30 V
8.3. Size:114K st
stp45nf06.pdf
STP45NF06 N-CHANNEL 60V - 0.022 - 38A TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP45NF06 60V
8.4. Size:1678K st
stb45n65m5 stf45n65m5 stp45n65m5.pdf
STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB 2 Order codes VDSS @ TJmax RDS(on) max ID 3 1 STB45N65M5 3 2 D2PAK 1 STF45N65M5 710 V 0.078 35 A TO-220FP STP45N65M5 TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa
8.5. Size:1336K st
stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf
STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V
8.6. Size:1166K st
std45n10f7 sti45n10f7 stp45n10f7.pdf
STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS ID PTOT max.(1) 1 3 STD45N10F7 DPAK 2 1 2 STI45N10F7 100 V 0.018 45 A 60 W I PAK TAB STP45N10F7 1. @ VGS = 10 V Ultra low on-resistance 3 2
8.7. Size:441K st
stp45nf06l.pdf
STP45NF06L STB45NF06L N-CHANNEL 60V - 0.022 - 38ATO-220/ D2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP45NF06L 60 V
8.8. Size:817K st
stp45n60dm6 stw45n60dm6.pdf
STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP45N60DM6 600 V 0.099 30 A STW45N60DM6 3 3 Fast-recovery body diode 2 2 1 Lower R x area vs previous generation DS(on) 1 Low gate charge, input capacitan
8.9. Size:435K st
stp45n10.pdf
STP45N10 STP45N10FI N - CHANNEL 100V - 0.027 - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP45N10 100 V
8.10. Size:355K st
stp45nf3ll stb45nf3ll.pdf
STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS(on) ID 3 3 STB45NF3LL 30V
8.11. Size:288K inchange semiconductor
stp45n65m5.pdf
isc N-Channel MOSFET Transistor STP45N65M5 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 78m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.12. Size:206K inchange semiconductor
stp45nf06.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP45NF06 FEATURES Typical R (on)=0.022 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC &DC-CAconverters Automotive environment ABSOLUTE MAXIMUM RATING
8.13. Size:286K inchange semiconductor
stp45n10f7.pdf
Isc N-Channel MOSFET Transistor STP45N10F7 FEATURES Static drain-source on-resistance RDS(on) 18m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20
Otros transistores... STP4403, STP4407, STP4407A, STP4435, STP4435A, STP45N10F7, STP45N65M5, STP45NE06, IRLZ44N, STP46NF30, STP4803, STP4925, STP4931, STP4953, STP4953A, STP4N80K5, STP4NA90
