STP60NH2LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP60NH2LLN-channel 24V - 0.010 - 40A TO-220STripFET Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP60NH2LL 24V

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - T0-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

STP60NS04ZBN-CHANNEL CLAMPED 10m - 60ATO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04ZB CLAMPED

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

STP60NF06N-channel 60V - 0.014 - 60A TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06 60V

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

STP60NS04ZN-CHANNEL CLAMPED 10m - 60A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04Z CLAMPED

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

STP60NE03L-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-10 30 V

STP60NE06-16STP60NE06-16FPN-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP60NE06-16 60 V

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

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STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAKSINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60NE10STP60NE10FPN - CHANNEL 100V - 0.016 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE10 100 V

STP60NF03LN-channel 30V - 0.008 - 60A TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF03L 30V

STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - TO-220 STripFET " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

STP60NF06FPN-channel 60V - 0.014 - 30A TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06FP 60V

STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V

STP60NF06FPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Para

STP60N3LH5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0095ID (A) 70Configuration SinglePackage TO-220AB/ TO-263TO-220AB DTO-263GSG D SN-Channel MOSFETG D STop View

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06LFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP60NF10FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)

isc N-Channel MOSFET Transistor STP60NE06-16FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06FPFEATURESTypical R (on)=0.08DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =