STP8NS25FP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP8NS25FP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-220FP

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STP8NS25FP Datasheet (PDF)

..1. Size:222K st
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STP8NS25STP8NS25FPN-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP8NS25 250 V

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STP8NS25STP8NS25FPN-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP8NS25 250 V

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STP8NS25STP8NS25FPN-CHANNEL 250V - 0.38 - 8A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP8NS25 250 V

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stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

9.2. Size:326K st
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STP8NC60STP8NC60FPN-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP8NC60 600 V

9.3. Size:554K st
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STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

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std8nm50n stf8nm50n stp8nm50n stu8nm50n.pdf pdf_icon

STD8NM50N, STF8NM50NSTP8NM50N, STU8NM50NN-channel 500 V, 0.73 , 5 A MDmeshII Power MOSFETin DPAK, IPAK, TO-220 and TO-220FPFeaturesOrder codes VDSS@TJMAX RDS(on)max. ID3312STD8NM50N1DPAKSTF8NM50NIPAK550 V

9.5. Size:738K st
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STB8NM60DSTP8NM60DN-CHANNEL 600V - 0.9 - 8A - TO-220/D2PAKFast Diode MDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB8NM60D 600V

9.6. Size:559K st
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STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

9.7. Size:352K st
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STP8NC50 - STP8NC50FPSTB8NC50-1N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP/I2PAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP(B)8NC50(-1) 500 V

9.8. Size:299K st
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STF8NK100ZSTP8NK100ZN-CHANNEL 1000V - 1.60 - 6.5A - TO-220 - TO-220FPZener-Protected SuperMESH MOSFETGeneral featuresVDSS RDS(on) ID PwTypeSTF8NK100Z 1000 V

9.9. Size:746K st
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STB8NM60DSTP8NM60DN-CHANNEL 600V - 0.9 - 8A - TO-220/D2PAKFast Diode MDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PTOTSTB8NM60D 600V

9.10. Size:329K st
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STP8NM50STP8NM50FPN-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FPMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP8NM50 500V

9.11. Size:1185K st
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STP8N80K5, STU8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. ID PTOTSTP8N80K5TAB800 V 0.95 6 A 110 WTABSTU8N80K53 Worldwide best FOM (figure of merit)2132 Ultra low gate charge1IPAKTO-220 100% avalanche tested

9.12. Size:472K st
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STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3 - 6.2A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP8NK80Z 800 V

9.13. Size:274K st
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STP8N120K5DatasheetN-channel 1200 V, 1.65 typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on) max. ID PTOTOrder codeTABSTP8N120K5 1200 V 2.00 6 A 130 W Industrys lowest RDS(on) x area32 Industrys best FoM (figure of merit)1TO-220 Ultra-low gate charge 100% avalanche tested Zener-protectedD(2, TAB)Applications

9.14. Size:603K st
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STP8NM60, STP8NM60FPSTD5NM60, STD5NM60-1N-CHANNEL 600V - 0.9 - 8A TO-220/TO-220FP/DPAK/IPAKMDmesh Power MOSFETTYPE VDSS RDS(on) ID PwSTP8NM60 600 V

9.15. Size:726K st
std8nm60nd stf8nm60nd stp8nm60nd stu8nm60nd.pdf pdf_icon

STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STD8NM60ND 650 V

9.16. Size:422K st
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STP8NK80Z - STP8NK80ZFPSTW8NK80ZN-channel 800V - 1.3 - 6.2A - TO-220 /TO-220FP/TO-247Zener-protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) IDSTP8NK80Z 800 V

9.17. Size:1239K st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf pdf_icon

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

9.18. Size:698K st
stf8nm60n std8nm60n stb8nm60n stp8nm60n.pdf pdf_icon

STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

9.19. Size:286K st
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STP8NM50STP8NM50FPN-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FPMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NM50 550V

9.20. Size:338K st
stf8nk85z stp8nk85z stp8nk85z stf8nk85z.pdf pdf_icon

STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

9.21. Size:337K st
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STP8NK85ZSTF8NK85ZN-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FPZener - protected SuperMESH Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP8NK85Z 850 V

9.22. Size:1298K st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf pdf_icon

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STx8NM60NN-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2132STB8NM60N 650 V

9.24. Size:532K st
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STP8NC70Z - STP8NC70ZFPSTB8NC70Z - STB8NC70Z-1N-CHANNEL 700V - 0.90 - 6.8A TO-220/FP/D2PAK/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP8NC70Z/FP 700V

9.25. Size:395K st
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STP8NA50STP8NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP8NA50 500 V

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STD5NM60STB8NM60 - STP8NM60N-channel 650 V@Tjmax, 0.9 , 8 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, DPAK, IPAKFeaturesType VDSS RDS(on) ID Pw31STD5NM60 650 V

9.28. Size:201K inchange semiconductor
stp8nk80zfp.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP8NK80ZFPDESCRIPTIONDrain Current I =6.2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSS100% avalanche testedFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETE

9.29. Size:190K inchange semiconductor
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP8N65M5FEATURESHigher V ratingDSSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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