STP9547 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP9547
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP-8

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STP9547 Datasheet (PDF)

..1. Size:375K stansontech
stp9547.pdf

STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

9.1. Size:760K st
std95n4f3 stp95n4f3.pdf

STD95N4F3STP95N4F3N-channel 40 V, 5.0 m, 80 A, DPAK, TO-220STripFET III Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTD95N4F3 40 V

9.2. Size:613K st
std95n2lh5 stp95n2lh5 stu95n2lh5.pdf

STD95N2LH5STP95N2LH5, STU95N2LH5N-channel 25 V, 0.0038 , 80 A, DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max ID33STD95N2LH5 25 V

9.3. Size:344K st
std95n04 std95n04 stp95n04 stp95n04.pdf

STD95N04STP95N04N-channel 40V - 5.4m - 80A - DPAK - TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTD95N04 40V

9.4. Size:933K st
stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf

STB95N3LLH6, STD95N3LLH6STP95N3LLH6, STU95N3LLH6N-channel 30 V, 0.0037 , 80 A, D2PAK, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max ID313STB95N3LLH6 30 V 0.0042 80 A 2DPAK1STD95N3LLH6 30 V 0.0042 80 ASTP95N3LLH6 30 V 0.0042 80 A IPAKSTU95N3LLH6 30 V 0.0047 80 A RDS(on) * Qg industry benchmark3

9.5. Size:1095K stansontech
stp9527.pdf

STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management a

9.6. Size:891K cn vbsemi
stp9527.pdf

STP9527www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8

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