STU60N3LH5-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STU60N3LH5-S
   Código: 60N3LH5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8.8 nC
   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 265 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: IPAK

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STU60N3LH5-S Datasheet (PDF)

..1. Size:747K st
std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

4.1. Size:386K st
std60n3lh5 stp60n3lh5 stu60n3lh5.pdf

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

8.1. Size:624K st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

9.1. Size:120K samhop
stu602s std602s.pdf

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9.2. Size:122K samhop
stu6025nl2 std6025nl2.pdf

GreenProductSTU/D6025NL2aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.5 @ VGS=10VSuface Mount Package.30V 60A9.5 @ VGS=4.5VGGSSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(I-PAK)(TA=25

9.3. Size:763K samhop
stu600s.pdf

GreenProductSTU/D600SSamHop Microelectronics Corp. Aug 25,2006N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS IDRDS(ON) ( m W ) MaxRugged and reliable.55 @ VGS = 10V16A60VTO-252 and TO-251 Package.70 @ VGS = 4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABSOL

9.4. Size:143K samhop
stu606s.pdf

GreenProductSTU/D606SaS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.56 @ VGS=10VSuface Mount Package.60V 21A68 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA

9.5. Size:97K samhop
stu601s.pdf

rPPrPPSTU601SaS mHop Microelectronics C orp.Ver 2.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.95 @ VGS=-10VSuface Mount Package.-60V -15A125 @ VGS=-4.5VESD Protected.GGSSSTU SERIES( )TO - 252AA D- PAK(TC=25C u

9.6. Size:98K samhop
stu609s std609s.pdf

GrPPrPPSTU/D609SaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.53 @ VGS=-10VTO-252 and TO-251 Package.-60V -20A80 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -

9.7. Size:110K samhop
stu6025nl std6025nl.pdf

GreenProductSTU/D6025NLSamHop Microelectronics Corp. Feb 25,2006 Ver1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) TypRugged and reliable.5.5 @ VGS = 10V30V 60ATO-252 and TO-251 Package.8 @ VGS = 4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-P

9.8. Size:96K samhop
stu608s std608s.pdf

STU/D608SSamHop Microelectronics Corp.Feb. 06 2007N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS IDRDS(ON) ( m ) MaxRugged and reliable.55 @ VGS = 10VTO-252 and TO-251 Package.60V 16A65@VGS = 4.5VESD Protected.DDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABSOLU

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