IRFR420B Todos los transistores

 ..1. Size:647K  fairchild semi
 irfr420b irfu420b.pdf

November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 0.1. Size:970K  cn vbsemi
 irfr420btm.pdf

IRFR420BTM www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

 7.1. Size:86K  international rectifier
 irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf

 7.2. Size:879K  international rectifier
 irfr420 irfu420.pdf

PD - 95078A IRFR420PbF IRFU420PbF Lead-Free 1/7/05 Document Number 91275 www.vishay.com 1 IRFR/U420PbF Document Number 91275 www.vishay.com 2 IRFR/U420PbF Document Number 91275 www.vishay.com 3 IRFR/U420PbF Document Number 91275 www.vishay.com 4 IRFR/U420PbF Document Number 91275 www.vishay.com 5 IRFR/U420PbF Document Number 91275 www.vishay.com 6 IRFR/U420

 7.3. Size:248K  international rectifier
 irfr420apbf irfu420apbf.pdf

PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitanc

 7.4. Size:114K  international rectifier
 irfr420a.pdf

PD - 94355 SMPS MOSFET IRFR420A IRFU420A Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply VDSS RDS(on) max ID High speed power switching 500V 3.0 3.3A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D-Pak I-Pak Avalan

 7.5. Size:170K  international rectifier
 irfr420.pdf

 7.6. Size:500K  samsung
 irfr420a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 7.7. Size:1841K  vishay
 irfr420 irfu420 sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche Rated Qg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 Available in Tap

 7.8. Size:265K  vishay
 irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

 7.9. Size:241K  vishay
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

 7.10. Size:1086K  vishay
 irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease

 7.11. Size:251K  infineon
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 17 Fully Characterized Capacitance and Qgs (nC) 4.3 Avalanche Voltage and Current Qgd (nC) 8.5

 7.12. Size:879K  cn vbsemi
 irfr420tr.pdf

IRFR420TR www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

 7.13. Size:241K  inchange semiconductor
 irfr420tr.pdf

isc N-Channel MOSFET Transistor IRFR420TR, IIRFR420TR FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate

 7.14. Size:264K  inchange semiconductor
 irfr420.pdf

isc N-Channel MOSFET Transistor IRFR420 FEATURES Drain Current I = 2.4A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos