IRFR48ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR48ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO-252

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IRFR48ZPBF datasheet

 ..1. Size:348K  international rectifier
 irfr48zpbf irfu48zpbf.pdf pdf_icon

IRFR48ZPBF

PD - 95950A IRFR48ZPbF IRFU48ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 11m G Description ID = 42A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

 7.1. Size:292K  international rectifier
 auirfr48ztr.pdf pdf_icon

IRFR48ZPBF

PD - 97586 AUTOMOTIVE GRADE AUIRFR48Z HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) max. 11m 175 C Operating Temperature Fast Switching G ID (Silicon Limited) 62A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * Des

 7.2. Size:678K  infineon
 auirfr48z.pdf pdf_icon

IRFR48ZPBF

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 7.3. Size:1583K  cn vbsemi
 irfr48ztr.pdf pdf_icon

IRFR48ZPBF

IRFR48ZTR www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

MOSTRAR MÁS

Otros transistores... IRFR420APBF, IRFR420B, IRFR420PBF, IRFR430A, IRFR430APBF, IRFR4510PBF, IRFR4615PBF, IRFR4620PBF, 20N60, IRFR5305PBF, IRFR540ZPBF, IRFR5410PBF, IRFR5505GPBF, IRFR5505PBF, IRFR6215PBF, IRFR9010PBF, IRFR9014PBF