IRFR9N20DPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFR9N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 86 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 97 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-252

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IRFR9N20DPBF datasheet

 ..1. Size:226K  international rectifier
irfr9n20dpbf irfu9n20dpbf.pdf pdf_icon

IRFR9N20DPBF

PD - 95376A IRFR9N20DPbF SMPS MOSFET IRFU9N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters l Lead-Free 200V 0.38 9.4A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Cu

 5.1. Size:126K  international rectifier
irfr9n20d.pdf pdf_icon

IRFR9N20DPBF

PD - 93919A IRFR9N20D SMPS MOSFET IRFU9N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.38 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IR

 5.2. Size:242K  inchange semiconductor
irfr9n20d.pdf pdf_icon

IRFR9N20DPBF

isc N-Channel MOSFET Transistor IRFR9N20D, IIRFR9N20D FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 9.1. Size:166K  1
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IRFR9N20DPBF

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