IRFS11N50APBF Todos los transistores

 ..1. Size:855K  international rectifier
 irfs11n50apbf.pdf

PD- 95232 IRFS11N50APbF Lead-Free 04/29/04 Document Number 91286 www.vishay.com 1 IRFS11N50APbF Document Number 91286 www.vishay.com 2 IRFS11N50APbF Document Number 91286 www.vishay.com 3 IRFS11N50APbF Document Number 91286 www.vishay.com 4 IRFS11N50APbF Document Number 91286 www.vishay.com 5 IRFS11N50APbF Document Number 91286 www.vishay.com 6 IRFS11N50APb

 ..2. Size:341K  vishay
 irfs11n50apbf sihfs11n50a.pdf

IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.52 Low Gate Charge Qg results in Simple Drive Qg (Max.) (nC) 52 Requirement Qgs (nC) 13 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 18 Ruggedness Fully Characterized Capacitance and Avalanc

 4.1. Size:118K  international rectifier
 irfs11n50a.pdf

PD- 93797 SMPS MOSFET IRFS11N50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 Pak Avalanche Voltage

 4.2. Size:277K  inchange semiconductor
 irfs11n50a.pdf

iscN-Channel MOSFET Transistor IRFS11N50A FEATURES Low drain-source on-resistance RDS(ON) =0.52 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.1. Size:262K  1
 irfs150a.pdf

IRFS150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 31 A Improved Gate Charge Extended Safe Operating Area TO-3PF 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sourc

 9.2. Size:280K  1
 irfs150 irfs151.pdf

 9.3. Size:277K  1
 irfs140 irfs141.pdf

 9.4. Size:259K  1
 irfs140a.pdf

IRFS140A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 23 A Improved Gate Charge Extended Safe Operating Area TO-3PF 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sour

 9.5. Size:140K  international rectifier
 irfb17n20d irfs17n20d irfsl17n20d.pdf

PD- 93902A IRFB17N20D IRFS17N20D SMPS MOSFET IRFSL17N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

 9.6. Size:277K  international rectifier
 irfs17n20dpbf.pdf

PD- 95325 IRFB17N20DPbF IRFS17N20DPbF SMPS MOSFET IRFSL17N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17 16A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch

 9.7. Size:26K  samsung
 irfs1xx irfs2xx irfs3xx irfs4xx.pdf