IRFS3206PBF Todos los transistores

 ..1. Size:323K  international rectifier
 irfb3206pbf irfs3206pbf irfsl3206pbf.pdf

IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification D VDSS 60V in SMPS RDS(on) typ. 2.4m l Uninterruptible Power Supply max. 3.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 210A ID (Package Limited) 120A Benefits S l Improved Gate, Avalanche and Dynamic D

 6.1. Size:716K  infineon
 auirfs3206 auirfsl3206.pdf

AUIRFS3206 AUTOMOTIVE GRADE AUIRFSL3206 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 2.4m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature ID (Silicon Limited) 210A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tj

 6.2. Size:258K  inchange semiconductor
 irfs3206.pdf

isc N-Channel MOSFET Transistor IRFS3206 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 7.1. Size:379K  international rectifier
 irfb3207 irfs3207 irfsl3207.pdf

PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn

 7.2. Size:378K  international rectifier
 irfs3207pbf.pdf

PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 7.3. Size:330K  international rectifier
 irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPbF IRFS3207ZPbF IRFSL3207ZPbF HEXFET Power MOSFET Applications D VDSS 75V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply max. 4.1m G l High Speed Power Switching ID (Silicon Limited) 170A l Hard Switched and High Frequency Circuits S ID (Package Limited) 120A Benefits D D l Improved Gate, Avalanche and Dynamic

 7.4. Size:704K  infineon
 auirfs3207z auirfsl3207z.pdf

 7.5. Size:258K  inchange semiconductor
 irfs3207.pdf

Isc N-Channel MOSFET Transistor IRFS3207 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.6. Size:240K  inchange semiconductor
 irfs3207z.pdf

Isc N-Channel MOSFET Transistor IRFS3207Z FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol